Author:
Lu Ching-Huang,Wong Gloria M. T.,Birringer Ryan,Dauskardt Reinhold,Deal Michael D.,Clemens Bruce M.,Nishi Yoshio
Subject
General Physics and Astronomy
Reference11 articles.
1. Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks
2. S. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnet, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. Tseng, B. H. Lee, and R. Jammy,Highly Manufacturable 45 nm LSTP CMOSETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration(IEEE VLSI Tech. Dig, 2006), pp. 13–14.
3. Y. Tsuchiya, M. Yoshiki, A. Kaneko, S. Inumiya, T. Saito, K. Nakajima, T. Aoyama, A. Nishiyama, and M. Koyama,Feasible Integration Scheme for Dual Work Function FUSI/HFSiON Gate Stacks with Selective Metal Pile up to n MOSFET(IEEE IEDM Digest, 2007), pp. 519–522.
4. Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications
5. A novel methodology on tuning work function of metal, gate using stacking bi-metal layers
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献