Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals-Reference-Cited by-同舟云学术

Defect Engineering at the Al₂O₃/(010) β-Ga₂O₃ Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

Published:2022-10 Issue:10 Volume:69 Page:5656-5663
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Islam Ahmad Ehteshamul¹^ORCID,Zhang Chenyu²,DeLello Kursti²,Muller David A.²^ORCID,Leedy Kevin D.¹^ORCID,Ganguli Sabyasachi³,Moser Neil A.¹^ORCID,Kahler Rachel⁴,Williams Jeremiah C.¹,Dryden Daniel M.⁴^ORCID,Tetlak Stephen¹^ORCID,Liddy Kyle J.¹,Green Andrew J.¹,Chabak Kelson D.¹^ORCID

Affiliation:

1. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH, USA

2. School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA

3. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, OH, USA

4. KBR Inc., Beavercreek, OH, USA

Funder

Air Force Office of Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09870683.pdf?arnumber=9870683

Reference45 articles.

1. Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC

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3. Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model

4. A novel methodology on tuning work function of metal, gate using stacking bi-metal layers

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