Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control-Reference-Cited by-同舟云学术

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Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control

Published:2004 Issue: Volume: Page:
ISSN:
Container-title:IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
language:
Short-container-title:

Author:

Colombeau B.¹,Smith A.J.¹,Cowern N.E.B.¹,Lerch W.,Paul S.,Pawlak B.J.,Cristiano F.,Hebras X.,Bolze D.,Ortiz C.,Pichler P.

Affiliation:

1. Adv. Technol. Inst., Surrey Univ., Guildford, UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9719/30682/01419348.pdf?arnumber=1419348

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Different Types of Phosphate Fertilizer on Phosphorus Absorption and Desorption in Acidic Red Soil of Southwest China;Sustainability;2022-08-12

2. Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability;Materials Science and Engineering: B;2008-12

3. Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing;Journal of The Electrochemical Society;2008

4. Diffusion and activation of dopants in silicon and advanced silicon-based materials;Physica Scripta;2006-08-17

5. Enabling Processes and Integration;Silicon Devices and Process Integration

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