Diffusion and activation of dopants in silicon and advanced silicon-based materials-Reference-Cited by-同舟云学术

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Diffusion and activation of dopants in silicon and advanced silicon-based materials

Published:2006-08-17 Issue: Volume:T126 Page:89-96
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Pichler Peter,Ortiz Christophe J,Colombeau Benjamin,Cowern Nicholas E B,Lampin Evelyne,Uppal Suresh,Karunaratne M S A,Bonar Janet M,Willoughby Arthur F W,Claverie Alain,Cristiano Filadelfo,Lerch Wilfried,Paul Silke

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2006/i=T126/a=021/pdf

Reference42 articles.

1. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells;physica status solidi (c);2013-12-09

2. Ab initio calculation of intrinsic diffusion coefficients for boron in silicon at finite temperatures;The European Physical Journal B;2009-11-07

3. Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions;Journal of Applied Physics;2009-02-15

4. Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI);Materials Science and Engineering: B;2008-12

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