Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)-Reference-Cited by-同舟云学术

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Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Published:2008-12 Issue: Volume:154-155 Page:114-117
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Bhandari J.,Vinet M.,Poiroux T.,Previtali B.,Vincent B.,Hutin L.,Barnes J.P.,Deleonibus S.,Ionescu A.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. ITRS roadmap 2007 edition.

2. Diffusion and activation of dopants in silicon and advanced silicon-based materials

3. Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

4. Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects;Scripta Materialia;2018-06

2. p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures;Journal of The Electrochemical Society;2011

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