Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability-Reference-Cited by-同舟云学术

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Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

Published:2008-12 Issue: Volume:154-155 Page:14-19
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Mok K.R.C.,Yeong S.H.,Colombeau B.,Benistant F.,Poon C.H.,Chan L.,Srinivasan M.P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. IEEE The Fourth International Workshop on Junction Technology;Lindsay,2004

2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

3. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

4. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

5. Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process Management;Flash Lamp Annealing;2019

2. Front-End Dopant Profile Engineering ☆;Reference Module in Materials Science and Materials Engineering;2018

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