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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

  • Published:2005-08 Issue:1-2 Volume:237 Page:107-112
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hamilton J.J.,Collart E.J.H.,Colombeau B.,Jeynes C.,Bersani M.,Giubertoni D.,Sharp J.A.,Cowern N.E.B.,Kirkby K.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid-Phase Epitaxy;Handbook of Crystal Growth;2015

2. Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge Substrates;ECS Transactions;2013-03-15

3. TCAD simulation of the co-implantation species C, F, and N in MOS transistors;AIP Conference Proceedings;2012

4. Kinetic Monte Carlo Study on the Suppression of Boron Transient Enhanced Diffusion with Carbon Pre-Implant;Journal of Nanoscience and Nanotechnology;2011-07-01

5. Effect of n- and p-type dopants on patterned amorphous regrowth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
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