Investigation of the performance limits of III-V double-gate n-MOSFETs-Reference-Cited by-同舟云学术

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Investigation of the performance limits of III-V double-gate n-MOSFETs

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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Pethe A.,Krishnamohan T.,Donghyun Kim ,Saeroonter Oh ,H.-S. Philip Wong ,Nishi Y.,Saraswat K.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609422.pdf?arnumber=1609422

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Analysis of Compound III-V Semiconductor Materials based MOSFET;2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON);2022-12-02

2. Reduction of contact resistance between Ni–InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer;Applied Physics Express;2017-02-28

3. Modeling direct interband tunneling. I. Bulk semiconductors;Journal of Applied Physics;2014-08-07

4. Device Physics and Performance Potential of III-V Field-Effect Transistors;Fundamentals of III-V Semiconductor MOSFETs;2010

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