Modeling direct interband tunneling. I. Bulk semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891527
Reference44 articles.
1. Long journey into tunneling
2. Investigation of the performance limits of III-V double-gate n-MOSFETs
3. Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristics
4. Numerical simulation of tunnel diodes for multi‐junction solar cells
5. Tunnel field-effect transistors as energy-efficient electronic switches
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2. Interband Tunneling in a Type-II Broken-Gap Superlattice;Physical Review Applied;2023-02-22
3. Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12
4. Reverse bias breakdown and photocurrent gain in CH3NH3PbBr3 films;Applied Physics Letters;2022-03-14
5. Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys;Physical Review Applied;2022-01-24
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