Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions-Reference-Cited by-同舟云学术

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Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions

Published:2022-09-12 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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Author:

Torrelli Valerio¹,Montoya Jesus Alberto Gonzalez¹,Tibaldi Alberto¹,Debernardi Pierluigi²,Simaz Andrea³,Belkin Mikhail A.³,Goano Michele¹,Bertazzi Francesco¹

Affiliation:

1. Politecnico di Torino, Corso Duca degli Abruzzi 24,Dipartimento di Elettronica e Telecomunicazioni,Torino,Italy,10129

2. CNR-IEIIT, Corso Duca degli Abruzzi 24,Torino,Italy,10129

3. Walter Schottky Institute c/o Technical University of Munich,Garching,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9894736/9894737/09894782.pdf?arnumber=9894782

Reference16 articles.

1. Rigorous theory and simplified model of the band-to-band tunneling in silicon

2. Theoretical estimation of tunnel currents in hetero-junctions: The special case of nitride tunnel junctions

3. Modeling direct interband tunneling. I. Bulk semiconductors

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