Performance Analysis of Compound III-V Semiconductor Materials based MOSFET-Reference-Cited by-同舟云学术

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Performance Analysis of Compound III-V Semiconductor Materials based MOSFET

Published:2022-12-02 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON)
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Author:

Maurya Ashish¹,Ahmad Md Akram¹,Kumar Pankaj¹,Kumar Jitendra¹,Koley Kalyan²

Affiliation:

1. Indian Institute of Technology (IIT-ISM),Department of Electronics Engineering,Dhanbad Dhanbad,Jharkhand,India

2. BIT Mesra,Department of Electronics and Communication Engineering,Ranchi,Jharkhand,India

Funder

Department of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9986304/9986356/09986476.pdf?arnumber=9986476

Reference14 articles.

1. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices

2. Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design

3. Benchmarking of III–V n-MOSFET Maturity and Feasibility for Future CMOS

4. High performance III-V MOSFETs: a dream close to reality?

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