Low power device technology with SiGe channel, HfSiON, and Poly-Si gate-Reference-Cited by-同舟云学术

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Low power device technology with SiGe channel, HfSiON, and Poly-Si gate

Published: Issue: Volume: Page:
ISSN:
Container-title:IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
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Author:

Wang H.C.-H.,Shang-Jr Chen ,Ming-Fang Wang ,Pang-Yen Tsai ,Ching-Wei Tsai ,Ta-Wei Wang ,Ting S.M.,Tuo-Hung Hou ,Peng-Soon Lim ,Huan-just Lin ,Ying Jin ,Hun-Jan Tao ,Shih-Chang Chen ,Diaz C.H.,Mong-Song Liang ,Chenming Hu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9719/30682/01419096.pdf?arnumber=1419096

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Low Damage Strip Process on Sige Surface State;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. SiGe Devices;High Mobility Materials for CMOS Applications;2018

3. Dual Work Function Silicon Nanowire MOS Transistors;Silicon Nanowire Transistors;2016

4. SiGe channel deposition by batch epitaxy;Solid-State Electronics;2015-08

5. SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyond;Thin Solid Films;2012-02

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