Dual Work Function Silicon Nanowire MOS Transistors
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-27177-4_1
Reference59 articles.
1. Collier CP, Wong EW, Belohradsky M, Raymo FM, Stoddard JF, Kuekes PJ, Williams RS, Heath JR (1999) Electronically configurable molecular-based logic gates. Science 285:391–394
2. Goldstein SC, Budiu M (2001) Nanofabrics: spatial computing using molecular electronics. Proc 28th Annu Int Symp Comp Archit: 178–189
3. Kim K, Das KK, Joshi RV, Chuang C-T (2005) Leakage power analysis of 25-nm double-gate CMOS devices and circuits. IEEE Trans Electron Devices 52(5):980–986
4. Tsutsui G, Saitoh M, Nagumo T, Hiramoto T (2005) Impact of SOI thickness fluctuation on threshold voltage variation in ultrathin body SOI MOSFETs. IEEE Trans Nanotechnol 4(3):369–373
5. Zhang R, Roy K, Janes DB (2001) Double-gate fully-depleted SOI transistors for low-power high performance nano-scale circuit design. Proc Int Symp Low Power Electron Design: 213–218
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