SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyond-Reference-Cited by-同舟云学术

SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyond

Published:2012-02 Issue:8 Volume:520 Page:3170-3174
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Reichel Carsten,Schoenekess Joerg,Kronholz Stephan,Beernink Gunda,Zeun Annekathrin,Dietel Andreas,Kammler Thorsten

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Symp. on VLSI Technology Digest of Technical Papers 2–1;Hobbs,2003

2. Symp. on VLSI Technology Digest of Technical Papers;Weber,2004

3. Low power device technology with SiGe channel, HfSiON, and Poly-Si gate

4. Symp. on VLSI Technology Digest on Technical Papers;Eneman,2010

5. Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate

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