Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1−xGex substrate-Reference-Cited by-同舟云学术

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Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1−xGex substrate

Published:2016-01 Issue: Volume:149 Page:46-51
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Peter Antony Premkumar,Witters Thomas,Dutta Shibesh,Hikavvy Andriy,Vaesen Inge,Van Elshocht Sven,Schaekers Marc

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Textured Ni(Pt) Germanosilicide Formation on a Condensed Si[sub 1−x]Ge[sub x]/Si Substrate

2. Enhanced growth of low-resistivity NiSi on epitaxial Si[sub 0.7]Ge[sub 0.3] on (001)Si with a sacrificial amorphous Si interlayer

3. Thin film reaction of transition metals with germanium

4. Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain

5. Study of silicide contacts to SiGe source/drain

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