Enhanced growth of low-resistivity NiSi on epitaxial Si[sub 0.7]Ge[sub 0.3] on (001)Si with a sacrificial amorphous Si interlayer
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation;ECS Transactions;2016-08-18
2. Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1−xGex substrate;Microelectronic Engineering;2016-01
3. Selective Epitaxial Growth of Heavily Boron-Doped Silicon with Uniform Doping Depth Profile;ECS Transactions;2013-03-15
4. Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer;Applied Surface Science;2011-08
5. Ni silicide formation on epitaxial Si1−yCy/(001) layers;Thin Solid Films;2010-10
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