Author:
Demeurisse C.,Verheyen P.,Opsomer K.,Vrancken C.,Absil P.,Lauwers A.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges
2. Study of silicide contacts to SiGe source/drain
3. J.A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, O. Richard, M. de Potter, R. Lindsay, K. Maex, in: Proceedings of the 203rd Meeting of the Electrochemical Society April 27–May 2, 2003, Paris, France, pp. 177–183.
4. Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability
5. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献