300 mm Multi Level Air Gap Integration for Edge Interconnect Technologies and Specific High Performance Applications

Author:

Gras R.,Gaillard F.,Bouchu D.,Farcy A.,Petitprez E.,Icard B.,Le-Denmat J. C.,Pain L.,Bustos J.,Haumesser P. H.,Brun P.,Imbert G.,Clement L.,Borowiak C.,Rivoire M.,Euvrard C.,Arnal V.,Olivier S.,Moreau S.,Mellier M.,Chevolleau T.,Passemard G.,Torres J.

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches;IEEE Transactions on Electron Devices;2023-11

2. Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD;ECS Journal of Solid State Science and Technology;2016

3. Chemistry in Interconnects;Chemistry in Microelectronics;2013-03-14

4. Process Integration of Interconnects;Advanced Interconnects for ULSI Technology;2012-02-17

5. Dielectric reliability of 70nm pitch air-gap interconnect structures;Microelectronic Engineering;2011-07

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