Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference14 articles.
1. In Search of Low- k Dielectrics
2. Han K. H. , “Reliable Integration of Robust Porous Ultra Low-k (ULK) for the Advanced BEOL Interconnect,” IITC (2013).
3. Gras R. , “300 mm Multi Level Air Gap Integration for Edge Interconncet Technologies and Specific High Performance Application,” IITC (2008).
4. Guedj C. , “Comparison between Dielectric Properties of Airgap and ULK Intetconnects,” ECS (Oct. 2008).
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2. Effects of Annealing Temperature and Pressure on the Nitride-based Precursor Conversion Behaviors;ECS Journal of Solid State Science and Technology;2020-03-20
3. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models;Applied Physics Reviews;2019-03
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