100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance-Reference-Cited by-同舟云学术

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100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Kobayashi Kenya,Kato Hiroaki,Nishiguchi Toshifumi,Shimomura Saya,Ohno Tetsuya,Nishiwaki Tatsuya,Aida Kikuo,Ichinoseki Kentaro,Oasa Kohei,Kawaguchi Yusuke

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8746072/8757559/08757615.pdf?arnumber=8757615

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs;physica status solidi (a);2024-08-15

2. New Modulation Method to Reduce Cell Capacitor Ripple Current in Modular Multilevel Cascade Converters and its Application to Active Power Filters;IEEJ Transactions on Industry Applications;2023-08-01

3. High Performance Dual Field Plate Trench MOSFETs for Middle-voltage Applications;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method;Japanese Journal of Applied Physics;2023-01-19

5. A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile;IET Power Electronics;2022-12-26

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