High Performance Dual Field Plate Trench MOSFETs for Middle-voltage Applications
Author:
Affiliation:
1. Advanced Semiconductor Device Development Center, Toshiba Electronic Devices & Storage Corporation,Ishikawa,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147550.pdf?arnumber=10147550
Reference10 articles.
1. 200V Trench Filling Type Super Junction MOSFET with Orthogonal Gate Structure
2. A New 200 V Dual Trench MOSFET With Stepped Oxide for Ultra Low RDS(on)
3. Advanced floating island and thick bottom oxide trench gate MOSFET (FITMOS) with reduced RonA during AC operation by passive hole gate and improved BVdss RonA trade-off by elliptical floating island;takaya;Proc of ISPSD'07,0
4. Process & Design Impact on BVDSS Stability of a Shield Gate Trench Power MOSFET;hossain;Proc of ISPSD'14,0
5. Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs;physica status solidi (a);2024-08-15
2. A novel MOSFET with lateral–vertical charge coupling for extremely low C gd;Semiconductor Science and Technology;2024-04-18
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