A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile-Reference-Cited by-同舟云学术

A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

Published:2022-12-26 Issue:6 Volume:16 Page:928-936
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Deng Gaoqaing¹,Wang Jun¹^ORCID,Tan Chen¹,Wu Yifan¹,Liang Shiwei¹,Ng Wai Tung²

Affiliation:

1. College of Electrical and Information Engineering Hunan University Changsha China

2. Edward S. Rogers Sr. Department of Electrical and Computer Engineering University of Toronto Toronto ON Canada

Funder

Fundamental Research Funds for the Central Universities

Key Research and Development Program of Hunan Province of China

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12439

Reference28 articles.

1. The Trench Power MOSFET: Part I—History, Technology, and Prospects

2. Baliga B.J.: Vertical field effect transistors having improved breakdown voltage capability and low on‐state resistance. United States Patent No. 5 637 898

3. Baliga B.J.: Vertical MOSFETs having trench‐based gate electrodes within deeper trench‐based source electrodes. U.S. Patent 6 621 121 Sep. 16 (2003)

4. Zeng J.: Ultra dense trench‐gated power‐device with the reduced drainsource feedback capacitance and Miller charge. U.S. Patent 6 683 346 Jan. 27 (2004)

5. Herrick R. Probst D. Session F.: Shielded gate field effect transistor with improved inter‐poly dielectric. U.S Patent 7 385 248 Aug. 9 (2005)

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