Investigation of threshold voltage stability of SiC MOSFETs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393597.pdf?arnumber=8393597
Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modelling SiC MOSFET module threshold voltage (V) and impact of parallel device ΔV on short circuit robustness;Microelectronics Reliability;2023-11
2. Reliable Gate Driving of SiC MOSFETs With Crosstalk Voltage Elimination and Two-Step Short-Circuit Protection;IEEE Transactions on Industrial Electronics;2023-10
3. Static and Dynamic Characteristics of a 1200-V/22 -mΩ Normally-Off SiC/GaN Cascode Device Built With Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT;IEEE Transactions on Power Electronics;2023-10
4. Reliability Improvement of 3.3 kV Full-SiC Power Modules for Power Cycling Tests With Sintered Copper Die Attach Technology;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-09
5. Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures;IEEE Transactions on Power Electronics;2023-07
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