Affiliation:
1. University Federico II
Abstract
SiC MOSFETs still suffers from some open issues, such as the high density of defects existing at the SiC/ SiO2 interface. In order to characterize such interface, a non-destructive investigation technique should be employed. In this work, we investigate the measurement of Gate capacitance with biased Drain. More in detail, the effect of frequency on such curves is considered. The analysis is performed using both in experimental setup and numerical framework. Experimental and numerical results both exhibit a sharp capacitance peak in the inversion region which reduces its height as frequency increases.
Publisher
Trans Tech Publications, Ltd.
Reference21 articles.
1. B.J. Baliga, Fundamentals of power semiconductor devices, Springer Science & Business Media, (2010).
2. C. Raynaud, et al., Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal‐oxide‐silicon carbide structures, Applied physics letters 66, no. 18: 2340-2342, (1995).
3. D. Peters et al., Investigation of threshold voltage stability of SiC MOSFETs, ISPSD, (2018).
4. Intrinsic SiC/SiO2 Interface States;Afanasev;physica status solidi (a)
5. Charge-based capacitance measurement for bias-dependent capacitance;Yao-Wen Chang;IEEE Electron Device Letters