Impact of technology scaling on CMOS RF devices and circuits-Reference-Cited by-同舟云学术

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Impact of technology scaling on CMOS RF devices and circuits

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Container-title:Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)
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Author:

Abou-Allam E.,Manku T.,Ting M.,Obrecht M.S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6878/18523/00852685.pdf?arnumber=852685

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance;Micromachines;2023-03-31

2. Analytical Modeling for a New Structure of Dielectric Pocket-Based Dual Material Double Gate TFET with Gate Oxide Stack;Silicon;2022-12-07

3. Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current;Silicon;2022-01-07

4. Investigation of Dielectric Pocket and Work function Engineering in Triple Material Hetero Gate Stack Oxide Double Gate TFET for Low Power Applications;TENCON 2021 - 2021 IEEE Region 10 Conference (TENCON);2021-12-07

5. Study of Noise Behavior of Heterojunction Double-Gate PNPN TFET for Different Parameter Variations;Lecture Notes in Electrical Engineering;2021-09-10

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