Affiliation:
1. School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
2. Nova Product Line, Xi’an Huawei Technologies Co., Xi’an 710065, China
Abstract
In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source)/Si(channel) can result in a smaller tunneling distance, which is very helpful in boosting the tunneling rate. The gate dielectric near the drain region consists of low-k SiO2 to weaken the gate control of the channel-drain tunneling junction and reduce the ambipolar current (Iamb). In contrast, the gate dielectric near the source region consists of high-k HfO2 to increase the on-state current (Ion) through the method of gate control. To further increase Ion, an n+-doped auxiliary tunneling barrier layer (pocket)is used to reduce the tunneling distance. Therefore, the proposed HJ-HD-P-DGTFET can obtain a higher on-state current and suppressed ambipolar effect. The simulation results show that a large Ion of 7.79 × 10−5 A/μm, a suppressed Ioff of 8.16 × 10−18 A/μm, minimum subthreshold swing (SSmin) of 19 mV/dec, a cutoff frequency (fT) of 19.95 GHz, and gain bandwidth product (GBW) of 2.07 GHz can be achieved. The data indicate that HJ-HD-P-DGTFET is a promising device for low-power-consumption radio frequency applications.
Funder
Provincial Natural Science Foundation of Shaanxi
the Key scientific research program of Shaanxi Provincial Department of Education
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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