Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Abou-Allam E, Manku T, Ting M, Obrecht MS (2000) Impact of technology scaling on CMOS RF devices and circuits. In: Proc. IEEE Custom Integr. Circuits Conf, pp 361–364
2. Bangsaruntip S, Cohen GM, Majumdar A, Sleight JW (2010) Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett 31(9):903–905
3. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337
4. Semiconductor Industry Association (SIA). (2005). International Technology Roadmap for Semiconductors (ITRS). [Online]. Available: http://www.itrs.net/. Accessed March 2021.
5. Sonam Rewari Subhasis, Haldar Vandana, Nath SS, Deswal, Gupta RS (2016) Numerical modeling of Subthreshold region of junctionless double surrounding gate MOSFET (JLDSG). Superlattices Microstruct 90:8–19
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