Contour based process characterization and modeling for HVM
Author:
Affiliation:
1. Shanghai Huali Integrated Circuit Corp,Shanghai,China
2. Mentor, a Siemens Business,Shanghai,China
3. Mentor, a Siemens Business,Wilsonville,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9971792/9972241/09972315.pdf?arnumber=9972315
Reference15 articles.
1. Contour based metrology: “make measurable what is not so"
2. Enabling scanning electron microscope contour-based optical proximity correction models
3. Massive metrology using fast e-beam technology improves OPC model accuracy by >2x at faster turnaround time
4. CD-SEM distortion quantification for EPE metrology and contour analysis;dillen;Proc SPIE,2017
5. Stochastic model prediction of pattern-failure
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