Massive metrology using fast e-beam technology improves OPC model accuracy by >2x at faster turnaround time

Author:

Zhao Qian,Wang ChangAn,Shi Hong-Fei,Guerrero James,Feng Mu,Wang Jen-Shiang,Koh Kar K.,Zhang Dong Q.,Zhang Hongxin,Krishnamurthy Subramanian,Fei Ray,Lin Chiawen,Fang Wei,Wang Fei,Wang Jazer,Wang Lei,Zhang Qiang,Liang Jiao,Guo Yunbo,Zhang Chen,Wallow Tom,Rio David,Wang Lester,Wang Alvin,Gronlund Keith,Lang Jun

Publisher

SPIE

Reference10 articles.

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2. Advanced optical lithography development, from UV to EUV

3. Enabling scanning electron microscope contour-based optical proximity correction models

4. SEM-Contour Based Mask Modeling;Vasek,2008

5. High-precision contouring from SEM image in 32-nm litho graphy and beyond;Shindo,2009

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1. Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-12-13

2. Contour based process characterization and modeling for HVM;2022 International Workshop on Advanced Patterning Solutions (IWAPS);2022-10-21

3. OPC model accuracy study using high volume contour based gauges and deep learning on memory device;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-03-26

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