Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling-Reference-Cited by-同舟云学术

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Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Published:2020-04 Issue:4 Volume:67 Page:1517-1522
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Zhuoqing^ORCID,Sun Zixuan^ORCID,Wang Runsheng^ORCID,Zhang Jiayang,Huang Ru

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9046113/09025752.pdf?arnumber=9025752

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of low-temperature and low-pressure mild oxidation after plasma solidification on electrical properties and reliability in ultra-thin SiON MOSFETs;Microelectronic Engineering;2024-09

2. Impact of Lightly Doped Drain on Hot Carrier Degradation Variability in N-FETs and SRAM Cells;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage;IEEE Transactions on Device and Materials Reliability;2024-03

4. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12

5. Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors;IEEE Journal of the Electron Devices Society;2024

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