Effect of Stress on Pull-in Voltage of RF MEMS SPDT Switch-Reference-Cited by-同舟云学术

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Effect of Stress on Pull-in Voltage of RF MEMS SPDT Switch

Published:2020-05 Issue:5 Volume:67 Page:2147-2152
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bansal Deepak^ORCID,Bajpai Anuroop^ORCID,Kumar Prem^ORCID,Kaur Maninder,Kumar Amit

Funder

Council of Scientific and Industrial Research, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9076344/09061128.pdf?arnumber=9061128

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio;Microsystem Technologies;2023-04-28

2. Validation of Snap-Through Voltages of Electrostatically Actuated Devices with Closed Form Equations;2023 IEEE International Conference on Contemporary Computing and Communications (InC4);2023-04-21

3. Accurate dynamic response expressions for electrostatically actuated RF-MEMS switches with damping effect;International Journal of Information Technology;2023-04

4. Design of a wide bandwidth terahertz MEMS Ohmic switch for 6G communication applications;Microsystem Technologies;2023-01-20

5. A Self-Corrected, Self-Cleaned MEMS and Suitable for Advanced Foundry Multi-Project Wafer (MPW);2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS);2023-01-15

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