Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s00542-023-05459-0.pdf
Reference26 articles.
1. Al-Dahleh R, Mansour RR (2010) High-capacitance-ratio warped-beam capacitive MEMS switch designs. J Microelectromech Syst 19(3):538–547. https://doi.org/10.1109/JMEMS.2010.2048012
2. Angira M, Rangra K (2015) Performance improvement of RF-MEMS capacitive switch via asymmetric structure design. Microsyst Technol 21(7):1447–1452. https://doi.org/10.1007/s00542-014-2222-8
3. Angira M, Sundram GM et al (2013) On the investigation of an interdigitated, high capacitance ratio shunt RF-MEMS switch for X- band applications. Tech Proceed 2013 NSTI Nanotechnol Conf Expo NSTI Nanotech 2:189
4. Ansari HR, Kordrostami Z (2020) Development of a low stress RF MEMS double-cantilever shunt capacitive switch. Microsyst Technol 26:2739–2748. https://doi.org/10.1007/s00542-020-04838-1
5. Bansal D, Bajpai A, Kumar P, Kaur M, Kumar A (2020) Effect of stress on pull-in voltage of RF MEMS SPDT switch. IEEE Trans Elect Dev 67(5):2147–2152. https://doi.org/10.1109/TED.2020.2982667
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