Reliability Evaluation of Copper (Cu) Through-Silicon Vias (TSV) Barrier and Dielectric Liner by Electrical Characterization and Physical Failure Analysis (PFA)-Reference-Cited by-同舟云学术

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Reliability Evaluation of Copper (Cu) Through-Silicon Vias (TSV) Barrier and Dielectric Liner by Electrical Characterization and Physical Failure Analysis (PFA)

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE 67th Electronic Components and Technology Conference (ECTC)
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Author:

Chan Jiawei Marvin,Cheng Xu,Lee Kheng Chooi,Kanert Werner,Tan Chuan Seng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7998598/7999654/07999674.pdf?arnumber=7999674

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Brief overview of the impact of thermal stress on the reliability of through silicon via: Analysis, characterization, and enhancement;Materials Science in Semiconductor Processing;2024-11

2. Effect of temperature cycling on the leakage mechanism of TSV liner;Microelectronics Reliability;2023-02

3. Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application;Micromachines;2022-12-30

4. Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation;Journal of Vacuum Science & Technology A;2021-09

5. Communication—A Rotating Ring Disk Study to Monitor the Concentration of 2M5S in Copper Low TEC Electrolytes;Journal of The Electrochemical Society;2021-05-01

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