Author:
Chen Si,Jian Xiaodong,Li Kai,Li Guoyuan,Wang Zhizhe,Yang Xiaofeng,Fu Zhiwei,Wang Hongyue
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Microsystems using three-dimensional integration and TSV technologies: fundamentals and applications[J];Wang;Microelectron. Eng.,2019
2. Recent advances in electromagnetic compatibility of 3D-ICS–Part II[J];Sicard;IEEE Electromagn. Compat. Mag.,2016
3. Backside-process-induced junction leakage and process improvement of cu TSV based on Cu/Sn and BCB hybrid bonding[J];Chang;IEEE Electron Device Lett.,2013
4. Comparative study of side-wall roughness effects on leakage currents in through-silicon via interconnects[C];Nakamura,2011
5. Magnetic field imaging and light induced capacitance alteration for failure analysis of cu-TSV interconnects[J];De Wolf;Microelectron. Reliab.,2020
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