Backside-Process-Induced Junction Leakage and Process Improvement of Cu TSV Based on Cu/Sn and BCB Hybrid Bonding-Reference-Cited by-同舟云学术

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Backside-Process-Induced Junction Leakage and Process Improvement of Cu TSV Based on Cu/Sn and BCB Hybrid Bonding

Published:2013-03 Issue:3 Volume:34 Page:435-437
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Yao-Jen,Ko Cheng-Ta,Yu Tsung-Han,Chiang Cheng-Hao,Chen Kuan-Neng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6468094/06417948.pdf?arnumber=6417948

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process;Crystals;2023-12-27

2. Study on the electrical breakdown failure mode transition of TSV-RDL;Microelectronics Journal;2023-11

3. Negative-Tone Photosensitive Polymeric Bonding Material to Enable Room Temperature Prebond for Cu/Polymer Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-08

4. Effect of temperature cycling on the leakage mechanism of TSV liner;Microelectronics Reliability;2023-02

5. Influence of Single/Double Sweeping Mode and Sweeping Voltage Increment/Polarity on Measurement of TSV Leakage Current;2019 IEEE 69th Electronic Components and Technology Conference (ECTC);2019-05

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