Brief overview of the impact of thermal stress on the reliability of through silicon via: Analysis, characterization, and enhancement-Reference-Cited by-同舟云学术

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Brief overview of the impact of thermal stress on the reliability of through silicon via: Analysis, characterization, and enhancement

Published:2024-11 Issue: Volume:183 Page:108745
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tang Shuiquan,Chen Jieshi^ORCID,Hu Yi Bo,Yu Chun,Lu Hao,Zhang Shuye^ORCID,Xiong Kai

Publisher

Elsevier BV

Reference113 articles.

1. Fifty Years of moore's Law;Mack;IEEE Trans. Semicond. Manuf.,2011

2. Understanding EUV Lithography: the technology that enables extension of Moore's Law;Bakshi;SPIE Newsroom,2018

3. Challenges and recent prospectives of 3D heterogeneous integration;Zhang;E-Prime - Adv Electr Eng Electron Energy,2022

4. Extreme ultraviolet lithography and three dimensional integrated circuit—a review;Wu;Appl. Phys. Rev.,2014

5. Overview and outlook of through‐silicon via (TSV) and 3D integrations;Lau;Microelectron. Int.,2011

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