Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
2. Lam Research Corporation, 11361 SW Leveton Drive, Tualatin, Oregon 97062
Funder
Lam Research Corp.
Samsung Electronics Inc.
National Science Foundation
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0001121
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method;Japanese Journal of Applied Physics;2023-03-27
3. Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies;Japanese Journal of Applied Physics;2022-11-30
4. Numerical investigation of SiO<sub>2</sub> film deposition enhanced by capacitively coupled discharge plasma;Acta Physica Sinica;2022
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