"Hole-in-One TSV", a New Via Last Concept for High Density 3D-SOC Interconnects-Reference-Cited by-同舟云学术

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"Hole-in-One TSV", a New Via Last Concept for High Density 3D-SOC Interconnects

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 68th Electronic Components and Technology Conference (ECTC)
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Author:

De Vos Joeri,Van Huylenbroeck Stefaan,Jourdain Anne,Heylen Nancy,Peng Lan,Jamieson Geraldine,Tutunjyan Nina,Sardo Stefano,Miller Andy,Beyne Eric

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8415930/8429093/08429741.pdf?arnumber=8429741

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Equivalent Circuit Model for Elliptic Cylindrical TSV Considering the Temperature Influence;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

2. Detection of bonding voids for 3D integration;Metrology, Inspection, and Process Control XXXVII;2023-04-27

3. The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization;Engineering Reports;2022-02-23

4. Power Delivery and Thermal-Aware Arm-Based Multi-Tier 3D Architecture;2021 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED);2021-07-26

5. PI/SI consideration for enabling 3D IC design;2021 IEEE 71st Electronic Components and Technology Conference (ECTC);2021-06

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