Author:
Nakasha Yasuhiro,Masuda Satoshi,Makiyama Kozo,Ohki Toshihiro,Kanamura Masahito,Okamoto Naoya,Tajima Tatsuhiko,Seino Takehiro,Shigematsu Hisao,Imanishi Kenji,Kikkawa Toshihide,Joshin Kazukiyo,Hara Naoki
Cited by
41 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A V-Band Oscillator Using GaN HEMTs;2024 IEEE International Workshop on Radio Frequency and Antenna Technologies (iWRF&AT);2024-05-31
2. An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC;International Journal of Circuit Theory and Applications;2024-01-23
3. A Fully Integrated $W$-Band Signal Source in 60/100-nm Si/AlGaN/GaN HEMT Technology;IEEE Transactions on Microwave Theory and Techniques;2024
4. A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%;IEEE Microwave and Wireless Technology Letters;2023-06