A V-Band Oscillator Using GaN HEMTs-Reference-Cited by-同舟云学术

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A V-Band Oscillator Using GaN HEMTs

Published:2024-05-31 Issue: Volume: Page:196-199
ISSN:
Container-title:2024 IEEE International Workshop on Radio Frequency and Antenna Technologies (iWRF&AT)
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Author:

Wang Jiayou¹,Chang Yin-Cheng²,Liu Yeke³,Hsu Shawn S.H.³,Huang Yi¹

Affiliation:

1. The University of Liverpool,Department of Electrical Engineering and Electronics,Liverpool,The UK

2. National Applied Research Laboratories,Taiwan Semiconductor Research Institute,Hsinchu,Taiwan

3. National Tsing Hua University,Institute of Electronics Engineering,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10593800/10594016/10594518.pdf?arnumber=10594518

Reference11 articles.

1. 2-D Self-Injection-Locked Doppler Radar for Locating Multiple People and Monitoring Their Vital Signs

2. AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for RF Applications

3. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

4. Testing the Temperature Limits of GaN-Based HEMT Devices

5. A Low Phase Noise X Band Class E Power VCO in 0.25 μm GaN/SiC Technology

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