Testing the Temperature Limits of GaN-Based HEMT Devices-Reference-Cited by-同舟云学术

Testing the Temperature Limits of GaN-Based HEMT Devices

Published:2010-12 Issue:4 Volume:10 Page:427-436
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Maier David,Alomari Mohammed,Grandjean Nicolas,Carlin Jean-Francois,Diforte-Poisson Marie-Antoinette,Dua Christian,Chuvilin Andrey,Troadec David,Gaquiere Christophe,Kaiser Ute,Delage Sylvain L.,Kohn Erhard

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/5703169/05570933.pdf?arnumber=5570933

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