0.18 um modular triple self-aligned embedded split-gate flash memory-Reference-Cited by-同舟云学术

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0.18 um modular triple self-aligned embedded split-gate flash memory

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Container-title:2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)
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Author:

Mih R.,Harrington J.,Houlihan K.,Hyun Koo Lee ,Chan K.,Johnson J.,Bomy Chen ,Jiang Yan ,Schmidt A.,Gruensfelder C.,Kisang Kim ,Shum D.,Lo C.,Lee D.,Levi A.,Chung Lam

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6881/18528/00852793.pdf?arnumber=852793

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and Formation of Superflash Nonvolatile Memory Cells;Russian Microelectronics;2024-06

2. Statistical modeling of degradation behavior in Split-Gate Non-Volatile memory devices;Solid-State Electronics;2024-01

3. A Method to Improve SST Flash Cell Program Function;2019 China Semiconductor Technology International Conference (CSTIC);2019-03

4. Investigation of read disturb in split-gate memory and its feasible solution;Microelectronics Reliability;2017-01

5. On-Chip Non-volatile Memory for Ultra-Low Power Operation;Enabling the Internet of Things;2017

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