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Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation

  • Published:2021-03 Issue:3 Volume:36 Page:2661-2675
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Baba SebastianORCID,Gieraltowski AndrzejORCID,Jasinski MarekORCID,Blaabjerg FredeORCID,Bahman Amir SajjadORCID,Zelechowski Marcin

Funder

Polish Ministry of Science and Higher Education Department

TRUMPF Huettinger

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Model-Based Thermal Stress and Lifetime Estimation of DFIG Wind Power Converter;Energies;2024-07-13

2. Active Power Cycling of SiC Modules Extended by Long-Term Monitoring of After Test;2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG);2024-06-24

3. Considerations on SiC MOSFET TSEP-based junction temperature measurement routines in practical use;PRZEGLĄD ELEKTROTECHNICZNY;2024-05-14

4. Thermography Analysis of Automotive SiC Power Modules for Reliability Assessment;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

5. Noise-Robust Online Measurement of the On-State Resistance of the Power Semiconductor Devices in PWM Converters;IEEE Access;2024
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