Copper-Wire Stress Buffers for Extending Lifetime of Double-Sided Bidirectional SiC Modules-Reference-Cited by-同舟云学术

Copper-Wire Stress Buffers for Extending Lifetime of Double-Sided Bidirectional SiC Modules

Published:2023-06 Issue:6 Volume:38 Page:7118-7127
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Liu Siqi¹,Mei Yun-Hui²^ORCID,Li Jing¹,Li Xin¹^ORCID,Lu Guo-Quan³^ORCID

Affiliation:

1. School of Materials Science and Engineering, Tianjin University, Tianjin, China

2. School of Electrical Engineering, Tiangong University, Tianjin, China

3. Center for Power Electronics Systems, Bradley Department of Electrical and Computer Engineering, and the Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA, USA

Funder

National Natural Science Foundation of China

Tianjin Municipal Science and Technology Bureau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10103359/10058528.pdf?arnumber=10058528

Reference35 articles.

1. A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules

2. 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

3. Power cycling capability of modules with SiC-diodes;herold;Proc Int Conf Integr Power Electron Syst,2014

4. Novel IGBT modules with epoxy resin encapsulation and insulating metal baseplate

5. Design and Characterizations of a Planar Multichip Half-Bridge Power Module by Pressureless Sintering of Nanosilver Paste

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