The Study on Thermal Performance of Cooling System and Interconnection Layer for High-Temperature SiC Applications
Author:
Affiliation:
1. Xi’an Jiaotong University,State Key Laboratory of Electrical Insulation and Power Equipment,Xi’an,China
2. State Grid Shanghai Electric Power Research Institute,Shanghai,China
Funder
State Grid Corporation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10215093/10215083/10215244.pdf?arnumber=10215244
Reference12 articles.
1. Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs
2. Symmetric Circuit Layout With Decoupled Modular Switching Cells for Multiparalleled SiC mosfets
3. Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature
4. Understanding Inherent Implication of Thermal Resistance in Double-Side Cooling Module
5. A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation
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