A Double-Sided 650 V GaN Power Device Using Flexible Buffers with Low Parasitic Inductance-Reference-Cited by-同舟云学术

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A Double-Sided 650 V GaN Power Device Using Flexible Buffers with Low Parasitic Inductance

Published:2023-06-09 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)
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Author:

Liu Siqi¹,Li Longnv²,Mei Yun-Hui²

Affiliation:

1. Tianjin University,School of Material Science and Engineering,Tianjin,China

2. Tiangong University,School of Electrical Engineering,Tianjin,China

Funder

National Natural Science Foundation of China

Tianjin Municipal Science and Technology Bureau

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10215093/10215083/10215139.pdf?arnumber=10215139

Reference15 articles.

1. Mechanical properties of spiral graphene/epoxy composites;liu;China Plastic Industry,2022

2. Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure;kim;Microelectronics Reliability,2019

3. Study and application of polymer insulation materials in power module packaging;zeng;insulating material,2021

4. Study on mechanical properties of NiMn Ga particle/epoxy resin composites;liu;Chinese Journal of Applied Mechanics,2014

5. A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

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