Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs
Author:
Affiliation:
1. Department of Electric Power Engineering, Norwegian University of Science and Technology, Trondheim, Norway
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9998566/09964123.pdf?arnumber=9964123
Reference52 articles.
1. Improved SiC MOSFET SPICE Model to Avoid Convergence Errors
2. Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior
3. An FPGA-Based IGBT Behavioral Model With High Transient Resolution for Real-Time Simulation of Power Electronic Circuits
4. A Device-Level Transient Modeling Approach for the FPGA-Based Real-Time Simulation of Power Converters
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1. Real-Time Digital Mapped Method for Sensorless Multitimescale Operation Condition Monitoring of Power Electronics Systems;IEEE Transactions on Industrial Electronics;2024-04
2. A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs;IEEE Transactions on Power Electronics;2024-03
3. Indirect Matrix Converter Hardware-in-the-Loop Semi-Physical Simulation Based on Latency-Free Decoupling;Electronics;2023-11-27
4. Investigation on the Thermal Stability of Silicon-carbide MOSFETs operating in Controlled Shoot-through mode;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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