Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs
Author:
Affiliation:
1. Department of Electric Power Engineering, Norwegian University of Science and Technology, Trondheim, Norway
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9998566/09964123.pdf?arnumber=9964123
Reference52 articles.
1. Improved SiC MOSFET SPICE Model to Avoid Convergence Errors
2. Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior
3. An FPGA-Based IGBT Behavioral Model With High Transient Resolution for Real-Time Simulation of Power Electronic Circuits
4. A Device-Level Transient Modeling Approach for the FPGA-Based Real-Time Simulation of Power Converters
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