Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior
Author:
Funder
Office of Naval Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Medicine
Link
http://xplorestaging.ieee.org/ielx7/8782709/8821491/09250456.pdf?arnumber=9250456
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures;IEEE Transactions on Power Electronics;2024-11
2. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01
3. Modeling Analysis and Simulation of SiC MOSFET Considering Temperature Effects;2023 3rd International Conference on Electronic Information Engineering and Computer (EIECT);2023-11-17
4. A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM;Key Engineering Materials;2023-05-25
5. Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-ON Switching Transients Modeling of High-Voltage SiC MOSFETs;IEEE Transactions on Power Electronics;2023-05
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