Affiliation:
1. University of Naples Federico II
Abstract
In this paper, two implementations of a SPICE-based compact model for SiC MOSFETs are presented. The two versions rely on widely adopted LEVEL-3 and BSIM 4.6.1 models, respectively. The paper discusses the feasibility of adopting these two models for the description of SiC power MOSFETs. Furthermore, after calibrating the DC characteristics on target experimental data coming from 1.7 kV-60 A MOSFETs, a comparison between the accuracy of the two is presented.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference13 articles.
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4. 25 March 2022. [Online]. Available: https://www.wolfspeed.com/document-library?format=ltspice-models.
5. 25 March 2022. [Online]. Available: https://www.onsemi.com/design/resources/ design-resources/models?rpn=NVBG020N120SC1
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