Author:
Castellazzi A.,Richardeau F.,Borghese A.,Boige F.,Fayyaz A.,Irace A.,Guibaud G.,Chazal V.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. SiC power MOSFETs performance, robustness and technology maturity;Castellazzi;Microelectron. Reliab.,2016
2. Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation;Boige;Microelectron. Reliab.,2018
3. Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs;Chen;Microelectron. Reliab.,2015
4. Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs;Romano,2015
5. Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy;Boige,2019
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